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| ES6U41 Transistors 2.5V Drive Nch+SBD MOSFET ES6U41 Structure Silicon N-channel MOSFET / Schottky barrier diode Dimensions (Unit : mm) WEMT6 (6) (5) (4) Features 1) Nch MOSFET and schottky barrier diode are put in WEMT6 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. (1) (2) (3) Abbreviated symbol : U41 Applications Switching Package specifications Package Type ES6U41 Code Basic ordering unit (pieces) Taping T2R 8000 Inner circuit (6) (5) (4) 2 (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain (6)Drain 1 (1) 1 ESD protection diode 2 Body diode (2) (3) Absolute maximum ratings (Ta=25C) 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP 1 IS ISP 1 Tch PD 2 Limits 30 12 1.5 6.0 0.75 6.0 150 0.7 Unit V V A A A A C W / ELEMENT 1 60Hz 1cycle 2 Mounted on ceramic board Symbol VRM VR IF IFSM Tj PD 1 Limits 25 20 0.5 2.0 150 0.5 Unit V V A A C W / ELEMENT 2 1/5 ES6U41 Transistors Mounted on a ceramic board Symbol PD Tstg Limits 0.8 -55 to +150 Unit W / TOTAL C Electrical characteristics (Ta=25C) IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Pulsed RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd VDD 15V ID= 0.75A VGS= 4.5V RL 20 RG= 10 VDD 15V, VGS= 4.5V ID= 1.5A, RL 10 RG= 10 Parameter Symbol Min. Forward voltage VSD - Typ. - Max. 1.2 Unit V Conditions IS= 0.75A, VGS=0V 2/5 ES6U41 Transistors Electrical characteristics curves 2 VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 2.5V VGS= 2.2V VGS= 1.8V VGS= 1.7V 0.5 VGS= 1.6V Ta=25C Pulsed 0 0 0.2 0.4 0.6 0.8 1 0 0 2 4 6 8 10 2 DRAIN CURRENT : ID[A] VGS= 10V VGS= 2.5V VGS= 2.2V Ta=25C Pulsed DRAIN CURRENT : ID[A] VGS= 1.8V 10 VDS= 10V Pulsed Ta= 125C Ta= 75C Ta= 25C Ta= - 25C DRAIN CURRENT : ID[A] 1.5 1.5 1 1 1 VGS= 1.7V VGS= 1.6V 0.1 0.5 VGS= 1.5V 0.01 0.001 0.5 1.0 1.5 2.0 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics() DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics() GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] Ta=25C Pulsed 1000 VGS= 4.5V Pulsed 1000 VGS= 4.0V Pulsed 100 VGS= 2.5V VGS= 4.0V VGS= 4.5V 100 Ta=125C Ta=75C Ta=25C Ta= -25C 10 0.01 0.1 1 10 100 Ta=125C Ta=75C Ta=25C Ta= -25C 10 0.01 0.1 1 10 10 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current() DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current() DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current() STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] 1000 VGS= 2.5V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 10 REVERSE DRAIN CURRENT : Is [A] VDS= 10V Pulsed 10 VGS=0V Pulsed 1 Ta=125C Ta=75C Ta=25C Ta=-25C 100 Ta=125C Ta=75C Ta=25C Ta= -25C 1 Ta= -25C Ta=25C Ta=75C Ta=125C 0.1 0.01 0.1 1 10 0.1 10 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current() 0.01 0.2 0.4 0.6 0.8 1.0 1.2 DRAIN-CURRENT : ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current SOURCE-DRAIN VOLTAGE : VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 3/5 ES6U41 Transistors 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] 800 600 400 200 0 0 2 4 6 8 10 GATE-SOURCE VOLTAGE : VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage ID= 1.50A ID= 0.75A 1000 GATE-SOURCE VOLTAGE : VGS [V] SWITCHING TIME : t [ns] Ta=25C VDD= 15V VGS= 4.5V RG=10 Pulsed 5 4 3 2 1 0 0 0.5 1 1.5 2 TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics Ta=25C Pulsed td(off) 100 tf 10 td(on) 1 0.01 0.1 tr 1 10 Ta=25C VDD= 15V ID= 1.5A RG=10 Pulsed DRAIN-CURRENT : ID[A] Fig.11 Switching Characteristics 1000 CAPACITANCE : C [pF] Ciss 100 Crss 10 Coss Ta=25C f=1MHz VGS=0V 1 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage 100000 10000 REVERSE CURRENT : IF (A) 1000 100 10 1 0.1 0.01 0 5 10 15 20 25 REVERSE VOLTAGE : VR[V] Fig.1 Reverse Current vs. Reverse Voltage Ta= - 25 Ta = 75 Ta = 25 1 pulsed FORWARD CURRENT : IF (A) pulsed 0.1 Ta = 75 Ta = 25 0.01 Ta= - 25 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF[V] Fig.2 Forward Current vs. Forward Voltage 4/5 ES6U41 Transistors Measurement circuit Pulse Width ID VGS RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% tr ton 90% 50% 10% 90% td(off) toff tf td(on) Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG ID VGS RL IG(Const.) RG D.U.T. VDD VDS VGS Qgs Qg Qgd Charge Fig.2-1 Gate Charge Measurement Circuit FIg.2-2 Gate Charge Waveform Notice 1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. 5/5 Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM CO.,LTD. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright (c) 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev3.0 |
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